MRF5S19060NBR1, MRF5S19060NR1 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF5S19060NBR1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev.6, 5/2006 RF Power Field Effect Transistors N - Chann.
1 μF, 35 V Tantalum Capacitor 10 pF 100B Chip Capacitor 6.

MRF5S19060NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* 200°C Capable Plastic Package
* N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
* In Tape and Ree

MRF5S19060NBR1 Applications

* with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment.
* Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Wat

📥 Download Datasheet

MRF5S19060NBR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF5S19060NBR1, MRF5S19060NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF5S19060NBR1, MRF5S19060NR1
Manufacturer: Freescale Semiconductor
File Size: 534.44 KB
Datasheet: MRF5S19060NR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF5S19060NBR1, MRF5S19060NR1.
Please refer to the document for exact specifications by model.

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