MRF8HP21130HSR3, MRF8HP21130HR3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF8HP21130HSR3 Description

Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev.0, 4/2011 RF Power Field Effect Transistors N *Channel Enhancement.
10 μF Chip Capacitors 15 pF Chip Capacitors 1.

MRF8HP21130HSR3 Features

* Advanced High Performance In
* Package Doherty
* Production Tested in a Doherty Configuration
* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Large
* Signal Load
* Pull Parameters and Common Source S
* Parameters

MRF8HP21130HSR3 Applications

* with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Doherty Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQB = 360 mA, VGSA = 0.4 Vdc, Pout = 28 Watts Avg. , IQ Magnitude Clippin

📥 Download Datasheet

MRF8HP21130HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8HP21130HSR3, MRF8HP21130HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF8HP21130HSR3, MRF8HP21130HR3
Manufacturer: Freescale Semiconductor
File Size: 580.64 KB
Datasheet: MRF8HP21130HR3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF8HP21130HSR3, MRF8HP21130HR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Freescale Semiconductor

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