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IGT8D20

Insulated Gate Bipolar Transistor

IGT8D20 Features

* Low VCE(SAT) - 2.3V typ @ 20A

* Ultra-fast turn-on - 200 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) maximum ratings (TC =

IGT8D20 Datasheet (290.75 KB)

Preview of IGT8D20 PDF

Datasheet Details

Part number:

IGT8D20

Manufacturer:

GE

File Size:

290.75 KB

Description:

Insulated gate bipolar transistor.
mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipo.

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IGT8D20 Insulated Gate Bipolar Transistor GE

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