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IGT8D20 - Insulated Gate Bipolar Transistor

GE

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Datasheet Details

Part number	IGT8D20
Manufacturer	GE
File Size	290.75 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT8D20-GE.pdf

IGT8D20 Product details

Features

Low VCE(SAT) - 2.3V typ @ 20A.
Ultra-fast turn-on - 200 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 20 amps @ 100°C N-.

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Published: Feb 11, 2019 |