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IGT8E21

Insulated Gate Bipolar Transistor

IGT8E21 Features

* Low VCE(SAT) - 2..5V typ @ 20A

* Ultra-fast turn-on -150 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y.'

IGT8E21 Datasheet (285.71 KB)

Preview of IGT8E21 PDF

Datasheet Details

Part number:

IGT8E21

Manufacturer:

GE

File Size:

285.71 KB

Description:

Insulated gate bipolar transistor.
mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV. RDS(ON) =0.145 n. This IG"f"I Transistor (Insulated Gate Bipolar Transis.

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IGT8E21 Insulated Gate Bipolar Transistor GE

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