IGT8E21 Datasheet - GE

IGT8E21 Insulated Gate Bipolar Transistor

mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV. RDS(ON) =0.145 n. This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similarto bipolar transistors. The device design and gate characteristics ofthe IGT'II Transistor are als.

IGT8E21 Features

* Low VCE(SAT) - 2..5V typ @ 20A

* Ultra-fast turn-on -150 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y.'

IGT8E21 Datasheet (285.71 KB)