IGT8E21, IGT8D21 Insulated Gate Bipolar Transistor

Description

mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV.RDS(ON) =0.145 n.This IG"f"I Transistor (Insulated Gate Bipolar Transis.

📥 Download Datasheet

IGT8E21 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT8E21, IGT8D21. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT8E21, IGT8D21
Manufacturer: GE
File Size: 285.71 KB
Datasheet: IGT8D21-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT8E21, IGT8D21.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2..5V typ @ 20A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y. '

IGT8E21 Distributors

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IGT8D21 Insulated Gate Bipolar Transistor GE

GE IGT8E21-like datasheet