IGT8E21 Datasheet, Transistor, GE

IGT8E21 Features

• Transistor
• Low VCE(SAT) - 2..5V typ @ 20A
• Ultra-fast turn-on -150 ns typical
• Polysilicon MOS gate - Voltage controlled turn on/off
• High current handling -

PDF File Details

Part number:

IGT8E21

Manufacturer:

GE

File Size:

285.71kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IGT8E21 Application

• Applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor controls, power supplies and drive

TAGS

IGT8E21

GE

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