IGT8D21 Insulated Gate Bipolar Transistor

Description

mTM1J~~~ Insulated Gate Bipolar Transistor 20AMPEFlES 400, 500 VOLTS EQUIV.RDS(ON) =0.145 n.This IG"f"I Transistor (Insulated Gate Bipolar Transis.

📥 Download Datasheet

IGT8D21 Datasheet Preview — Preview of IGT8D21 PDF

Datasheet Specifications

Part number: IGT8D21
Manufacturer: GE
File Size: 285.71 KB
Datasheet: IGT8D21-GE.pdf
Description: Insulated Gate Bipolar Transistor

Features

* Low VCE(SAT) - 2..5V typ @ 20A
* Ultra-fast turn-on -150 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 90° C N-CHANNfEl c o~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) r r.6'S ('S.62)Y. '

IGT8D21 Distributors

📁 Related Datasheet

IGT40R070D1E8220 IGT60R042D1 IGT60R070D1 IGT60R190D1 IGT60R190D1S IGT65R025D2

📌 All Tags

IGT8D21 Insulated Gate Bipolar Transistor GE

GE IGT8D21-like datasheet