Datasheet4U.com

IGT8E20, IGT8D20 - Insulated Gate Bipolar Transistor

GE

📥 Download Datasheet

IGT8E20 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT8E20, IGT8D20. Please refer to the document for exact specifications by model.

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IGT8E20, IGT8D20
Manufacturer	GE
File Size	290.75 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IGT8D20-GE.pdf
Note	This datasheet PDF includes multiple part numbers: IGT8E20, IGT8D20. Please refer to the document for exact specifications by model.

IGT8E20 Product details

Features

Low VCE(SAT) - 2.3V typ @ 20A.
Ultra-fast turn-on - 200 ns typical.
Polysilicon MOS gate - Voltage controlled turn on/off.
High current handling - 20 amps @ 100°C N-.

📁 IGT8E20 Similar Datasheet

IGT40R070D1E8220 - Power Transistor (Infineon)
IGT60R042D1 - Power Transistor (Infineon)
IGT60R070D1 - 600V enhancement-mode Power Transistor (Infineon)
IGT60R190D1 - Power Transistor (Infineon)
IGT60R190D1S - 600V enhancement-mode Power Transistor (Infineon)
IGT65R025D2 - 650V Transistor (Infineon)
IGT65R035D2 - 650V Transistor (Infineon)
IGT65R045D2 - 650V Transistor (Infineon)

Other Datasheets by GE

IGT8E21 - Insulated Gate Bipolar Transistor
IGT8D20 - Insulated Gate Bipolar Transistor
IGT8D21 - Insulated Gate Bipolar Transistor
IGT4D10 - Insulated Gate Bipolar Transistor
IGT4D11 - Insulated Gate Bipolar Transistor
IGT4E10 - Insulated Gate Bipolar Transistor

Published: Feb 11, 2019 |