IGT8E20, IGT8D20 Insulated Gate Bipolar Transistor

Description

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV.ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipo.

📥 Download Datasheet

IGT8E20 Datasheet Preview — This datasheet PDF includes multiple part numbers: IGT8E20, IGT8D20. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IGT8E20, IGT8D20
Manufacturer: GE
File Size: 290.75 KB
Datasheet: IGT8D20-GE.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IGT8E20, IGT8D20.
Please refer to the document for exact specifications by model.

Features

* Low VCE(SAT) - 2.3V typ @ 20A
* Ultra-fast turn-on - 200 ns typical
* Polysilicon MOS gate - Voltage controlled turn on/off
* High current handling - 20 amps @ 100°C N-CHANNEL c . ~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) maximum ratings (TC =

IGT8E20 Distributors

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IGT8D20 Insulated Gate Bipolar Transistor GE

GE IGT8E20-like datasheet