IGT8E20, IGT8D20 Datasheet - GE

IGT8E20 Insulated Gate Bipolar Transistor

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT8D20,E20 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.12 n This IG"f'M Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics of the IGT'M Transi.

IGT8E20 Features

* Low VCE(SAT) - 2.3V typ @ 20A

* Ultra-fast turn-on - 200 ns typical

* Polysilicon MOS gate - Voltage controlled turn on/off

* High current handling - 20 amps @ 100°C N-CHANNEL c .~ CASE STYLE TO-247 DIMENSIONS ARE IN INCHES AND (MILLIMETERS) maximum ratings (TC =

IGT8D20-GE.pdf