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GD2X100MPS12N - Silicon Carbide Schottky Diode

GeneSiC

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Datasheet Details

Part number	GD2X100MPS12N
Manufacturer	GeneSiC
File Size	581.95 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GD2X100MPS12N-GeneSiC.pdf

GD2X100MPS12N Product details

Features

Gen4 Thin Chip Technology for Low VF.
Superior Figure of Merit QC/IF.
100% Avalanche Tested.
Enhanced Surge Current Robustness.
Temperature Independent Fast Switching.
Low Thermal Resistance.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package SOT-227 TM VRRM = IF (TC = 114°C) = QC = 1200 V 200 A.
644 nC.
A A RoHS K K REACH Advantages.
Improved System Efficiency.

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Published: Dec 20, 2024 |