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GD2X100MPS12N - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC/IF.
  • 100% Avalanche Tested.
  • Enhanced Surge Current Robustness.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Package SOT-227 TM VRRM = IF (TC = 114°C) = QC = 1200 V 200 A.
  • 644 nC.
  • A A RoHS K K REACH Advantages.
  • Improved System Efficiency.

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Datasheet Details

Part number GD2X100MPS12N
Manufacturer GeneSiC
File Size 581.95 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD2X100MPS12N Datasheet
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GD2X100MPS12N 1200V 200A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC/IF • 100% Avalanche Tested • Enhanced Surge Current Robustness • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Package SOT-227 TM VRRM = IF (TC = 114°C) = QC = 1200 V 200 A * 644 nC * A A RoHS K K REACH Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Applications • EV Fast Chargers • Solar Inverters • Train Auxiliary Pow
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