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HM2N10 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2N10 Description

N-Channel Enhancement Mode Power MOSFET .
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM2N10 Features

* VDS = 100V,ID = 2A RDS(ON)

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Datasheet Details

Part number: HM2N10
Manufacturer: H&M Semiconductor
File Size: 275.30 KB
Datasheet: HM2N10-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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