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HM4887 - Dual P-Channel Enhancement Mode Power MOSFET

HM4887 Description

HM4887 Dual P-Channel Enhancement Mode Power MOSFET .
The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM4887 Features

* VDS =-100V,ID =-4.5A RDS(ON)

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Datasheet Details

Part number
HM4887
Manufacturer
H&M Semiconductor
File Size
505.22 KB
Datasheet
HM4887-HMSemiconductor.pdf
Description
Dual P-Channel Enhancement Mode Power MOSFET

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📌 All Tags

Dual P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM4887-like datasheet