HPD700R1K3SA - Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

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Datasheet Details

Part number: HPD700R1K3SA
Manufacturer: HUAJING MICROELECTRONICS
File Size: 422.67 KB
Datasheet: HPD700R1K3SA-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

HPD700R1K3SA Product details

Description

HPD700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 700 V 6A 94 W 0.95 Ω.

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Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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