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3SK322 - Silicon N-Channel Dual Gate MOS FET

3SK322 Description

3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A (Z) 2nd.Edition Dec.1998 Application UHF / VHF RF amplifier .

3SK322 Features

* Low noise figure. NF = 1.0 dB typ. at f = 200 MHz
* Capable of low voltage operation
* Provide mini mold packages; MPAK-4R(SOT-143 var. ) Outline 3SK322 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drai

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Datasheet Details

Part number
3SK322
Manufacturer
Hitachi Semiconductor
File Size
90.15 KB
Datasheet
3SK322_HitachiSemiconductor.pdf
Description
Silicon N-Channel Dual Gate MOS FET

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📌 All Tags

Silicon N-Channel Dual Gate MOS FET Hitachi Semiconductor
Hitachi Semiconductor 3SK322-like datasheet