Datasheet4U.com

HSC226 - Silicon Schottky Barrier Diode

Hitachi Semiconductor

📥 Download Datasheet

HSC226 Datasheet Preview — Preview of HSC226 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number: HSC226
Manufacturer: Hitachi Semiconductor
File Size: 28.83 KB
Datasheet: HSC226_HitachiSemiconductor.pdf
Description: Silicon Schottky Barrier Diode

HSC226 Product details

Features

Low reverse current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC226 Laser Mark S4 Package Code UFP Outline Cathode mark Mark 1 S4 2 1. Cathode 2. Anode HSC226 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Note: 10ms Sinewave 1pulse Symbol VRRM Value 25 200 50 125.

📁 Related Datasheet

HSC2228Y - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSC2240 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSC200 - Aluminium Housed Power Resistors (TE)
HSC250 - Aluminium Housed Power Resistors (TE)
HSC2625 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSC2682 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
HSC100 - Aluminium Housed Power Resistors (TE)
HSC106D - Silicon Controlled Rectifier (SemiHow)

📌 All Tags

Silicon Schottky Barrier Diode Hitachi Semiconductor

Hitachi Semiconductor HSC226-like datasheet

HSC276 - Silicon Schottky Barrier Diode for Mixer
HSC276A - Silicon Schottky Barrier Diode for Mixer
HSC277 - Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
HSC278 - Silicon Schottky Barrier Diode
HSC119 - Silicon Epitaxial Planar Diode for High Speed Switching

HSC226 Stock/Price