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HSC276 - Silicon Schottky Barrier Diode for Mixer

Hitachi Semiconductor

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Datasheet Details

Part number: HSC276
Manufacturer: Hitachi Semiconductor
File Size: 24.26 KB
Datasheet: HSC276_HitachiSemiconductor.pdf
Description: Silicon Schottky Barrier Diode for Mixer

HSC276 Product details

Features

High forward current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reve.

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Silicon Schottky Barrier Diode for Mixer Hitachi Semiconductor

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