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HSC278 - Silicon Schottky Barrier Diode

Hitachi Semiconductor

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Datasheet Details

Part number: HSC278
Manufacturer: Hitachi Semiconductor
File Size: 71.61 KB
Datasheet: HSC278_HitachiSemiconductor.pdf
Description: Silicon Schottky Barrier Diode

HSC278 Product details

Features

Low forward voltage, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC278 Laser Mark S6 Package Code UFP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode HSC278 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Non-Repetitive peak forward surge current Peak forward current Average rectified current Junction temperature Storage temperature Note: 10 mse.

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Silicon Schottky Barrier Diode Hitachi Semiconductor

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