Datasheet4U Logo Datasheet4U.com

CS10N80A8D

Silicon N-Channel Power MOSFET

CS10N80A8D Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VD

CS10N80A8D General Description

CS10N80 A8D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 160 0.72 performance and enhance the avalanche energy. The transistor can be used in various power sw.

CS10N80A8D Datasheet (546.82 KB)

Preview of CS10N80A8D PDF

Datasheet Details

Part number:

CS10N80A8D

Manufacturer:

Huajing Microelectronics

File Size:

546.82 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS10N80AND Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS10N80FA9D Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS10N045AE-G Silicon N-Channel Power MOSFET (CR Micro)

CS10N06BE-G Silicon N-Channel Power MOSFET (CR Micro)

CS10N15A3 Silicon N-Channel Power MOSFET (CR Micro)

CS10N15A4 Silicon N-Channel Power MOSFET (CR Micro)

CS10N40A4R Silicon N-Channel Power MOSFET (CR Micro)

CS10N40A8R Silicon N-Channel Power MOSFET (CR Micro)

CS10N40FA9R Silicon N-Channel Power MOSFET (CR Micro)

CS10N50A8R Silicon N-Channel Power MOSFET (Huajing Microelectronics)

TAGS

CS10N80A8D Silicon N-Channel Power MOSFET Huajing Microelectronics

Image Gallery

CS10N80A8D Datasheet Preview Page 2 CS10N80A8D Datasheet Preview Page 3

CS10N80A8D Distributor