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CS10N80AND Datasheet - Huajing Microelectronics

Silicon N-Channel Power MOSFET

CS10N80AND Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID ID

CS10N80AND General Description

CS10N80 AND, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization a.

CS10N80AND Datasheet (303.89 KB)

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CS10N80AND

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Huajing Microelectronics

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303.89 KB

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Silicon n-channel power mosfet.

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CS10N80AND Silicon N-Channel Power MOSFET Huajing Microelectronics

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CS10N80AND Features

CS10N80AND General Description

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