CS10N80FA9D Datasheet, Mosfet, Huajing Microelectronics

CS10N80FA9D Features

• Mosfet l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 25pF) l 100% Single Pulse avalanche energy Test Applicati

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CS10N80FA9D

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Huajing Microelectronics

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📄 Datasheet

Description:

Silicon n-channel power mosfet. CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conductio

CS10N80FA9D Application

• Applications Power switch circuit of PC POWER. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS EAR

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CS10N80FA9D

Huajing Microelectronics

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