Datasheet Details
| Part number | CS1N70A3H-G |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 445.26 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 CS1N70A3H-G-HuajingMicroelectronics.pdf
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The CS1N70A3H-G is Silicon N-Channel Power MOSFET designed by Huajing Microelectronics.
| Part number | CS1N70A3H-G |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 445.26 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
CS1N70A3H-G-HuajingMicroelectronics.pdf
|
|
|
|
VDSS 700 V CS1N70 A3H-G, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 25 W which reduce the conduction loss, improve switching RDS(ON)Typ 13 Ω performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-251, which accords with the RoHS standard.
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