CS12N60FA9HD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

CS12N60FA9HD Datasheet Preview — Preview of CS12N60FA9HD PDF

Datasheet Details

Part number	CS12N60FA9HD
Manufacturer	Huajing Microelectronics
File Size	353.81 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS12N60FA9HD-HuajingMicroelectronics.pdf

CS12N60FA9HD Product details

Description

CS12N60F A9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 600 12 55 0.5 switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:46nC) l Low Reverse transfer capacitances(Typical:23pF) l 100% Single Pulse avalanche energy Test.

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Published: Dec 6, 2016 |