CS14N10A3 - Silicon N-Channel Power MOSFET

Huajing Microelectronics

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Datasheet Details

Part number: CS14N10A3
Manufacturer: Huajing Microelectronics
File Size: 456.18 KB
Datasheet: CS14N10A3-HuajingMicroelectronics.pdf
Description: Silicon N-Channel Power MOSFET

CS14N10A3 Product details

Description

CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy.This device is suitable for use as a load switch and PWM applications.The package form is TO-251, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test.

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Published: Jan 30, 2019 |