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CS6N70A4D-G Silicon N-Channel Power MOSFET

CS6N70A4D-G Description

Silicon N-Channel Power MOSFET ○R CS6N70 A4D-G General .
CS6N70 A4D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improv.

CS6N70A4D-G Features

* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data:15.5nC)
* Low Reverse transfer capacitances(Typical:6pF)

CS6N70A4D-G Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage

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