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2SD1168 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for rob.

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Datasheet Specifications

Part number
2SD1168
Manufacturer
INCHANGE
File Size
203.22 KB
Datasheet
2SD1168-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCER Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current-Pul

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