2SD1395 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). High DC Current Gain : hFE= 1000(Min) @IC= 2. Low Saturation Voltage. F.

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Datasheet Specifications

Part number: 2SD1395
Manufacturer: INCHANGE
File Size: 200.50 KB
Datasheet: 2SD1395-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A

2SD1395 Distributors

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2SD1395 NPN Transistor INCHANGE

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