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2SD1647 NPN Transistor

2SD1647 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647 .
Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1. High DC Current Gain : hFE= 1000(Min) @IC= 1. Low Saturation.

2SD1647 Applications

* Designed for general purpose amplifier and low frequency power Amp applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage 50-70 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuo

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Datasheet Details

Part number
2SD1647
Manufacturer
INCHANGE
File Size
199.41 KB
Datasheet
2SD1647-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1647-like datasheet