2SD552 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD552 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V (Min). High Power Dissipation. Complement to Type 2SB552. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SD552
Manufacturer: INCHANGE
File Size: 204.47 KB
Datasheet: 2SD552-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplifier, power switching applications.
* DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current

2SD552 Distributors

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2SD552 NPN Transistor INCHANGE

INCHANGE 2SD552-like datasheet