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2SD552 NPN Transistor

2SD552 Description

isc Silicon NPN Power Transistor 2SD552 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V (Min). High Power Dissipation. Complement to Type 2SB552. Minimum Lot-to-Lot va.

2SD552 Applications

* Power amplifier, power switching applications.
* DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 220 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current

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Datasheet Details

Part number
2SD552
Manufacturer
INCHANGE
File Size
204.47 KB
Datasheet
2SD552-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD552-like datasheet