Datasheet Details
- Part number
- IXTA60N10T
- Manufacturer
- INCHANGE
- File Size
- 199.03 KB
- Datasheet
- IXTA60N10T-INCHANGE.pdf
- Description
- N-Channel MOSFET
IXTA60N10T Description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA60N10T *.
IXTA60N10T Features
* With TO-263(D2PAK) packaging
* Low gate charge
* High speed switching
* Low on-resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IXTA60N10T Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
60
IDM
Drain Current-Single Pulsed
180
PD
Total Dissipation
176
Tj
Operating Junction Temperature
-55~
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