IXTA60N10T Datasheet - INCHANGE

IXTA60N10T, N-Channel MOSFET

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA60N10T *

Features

* With TO-263(D2PAK) packaging
* Low gate charge
* High speed switching
* Low on-resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 176 Tj Operating Junction Temperature -55~

IXTA60N10T-INCHANGE.pdf