IXTH26N60P N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

📥 Download Datasheet

IXTH26N60P Datasheet Preview — Preview of IXTH26N60P PDF

Datasheet Specifications

Part number: IXTH26N60P
Manufacturer: INCHANGE
File Size: 332.12 KB
Datasheet: IXTH26N60P-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 270mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 26 A IDM Drain Current-Single Plused 65 A PD Total Dissipation @TC=25℃ 460

IXTH26N60P Distributors

📁 Related Datasheet

IXTH260N055T2 IXTH26P20P IXTH200N075T IXTH200N085T IXTH200N10T IXTH20N50D

📌 All Tags

IXTH26N60P N-Channel MOSFET INCHANGE

INCHANGE IXTH26N60P-like datasheet