IXTQ180N085T N-ChannelMOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: IXTQ180N085T
Manufacturer: INCHANGE
File Size: 254.88 KB
Datasheet: IXTQ180N085T-INCHANGE.pdf
Description: N-ChannelMOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V
* Fully characterized avalanche voltage and current
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 85 UNIT V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 180 A IDM Drain Current-Single Pulsed 480 A PD Total Dissipation @TC=25℃ 430 W Tj Operating Junction Temperature -55~1

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IXTQ180N085T N-ChannelMOSFET INCHANGE

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