IXTQ180N085T - N-ChannelMOSFET

INCHANGE

Datasheet Details

Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 21, 2020 |