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IXTQ180N085T

N-ChannelMOSFET

IXTQ180N085T Features

* Static drain-source on-resistance: RDS(on) ≤ 5.5mΩ@VGS=10V

* Fully characterized avalanche voltage and current

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* DC/DC Converters

* High Current Switchin

IXTQ180N085T Datasheet (254.88 KB)

Preview of IXTQ180N085T PDF

Datasheet Details

Part number:

IXTQ180N085T

Manufacturer:

INCHANGE

File Size:

254.88 KB

Description:

N-channelmosfet.

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IXTQ180N085T N-ChannelMOSFET INCHANGE

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