Part number:
IXTQ180N10T
Manufacturer:
INCHANGE
File Size:
252.55 KB
Description:
N-channelmosfet.
IXTQ180N10T Datasheet (252.55 KB)
* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATIONS
* Switch-Mode and Resonant-Mode Power
IXTQ180N10T Datasheet (252.55 KB)
IXTQ180N10T
INCHANGE
252.55 KB
N-channelmosfet.
📁 Related Datasheet
IXTQ180N10T Power MOSFET (IXYS Corporation)
IXTQ180N055T (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET (IXYS Corporation)
IXTQ180N085T Power MOSFET (IXYS Corporation)
IXTQ180N085T N-ChannelMOSFET (INCHANGE)
IXTQ182N055T Power MOSFET (IXYS Corporation)
IXTQ182N055T N-ChannelMOSFET (INCHANGE)
IXTQ18N60P Power MOSFET (IXYS)
IXTQ18N60P N-Channel MOSFET (INCHANGE)
IXTQ100N25P N-Channel MOSFET (IXYS Corporation)
IXTQ102N15T Power MOSFET (IXYS)
