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IXTQ180N10T Datasheet - INCHANGE

IXTQ180N10T - N-ChannelMOSFET

IXTQ180N10T Features

* Drain Source Voltage- : VDSS= 100V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switch-Mode and Resonant-Mode Power

IXTQ180N10T-INCHANGE.pdf

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Datasheet Details

Part number:

IXTQ180N10T

Manufacturer:

INCHANGE

File Size:

252.55 KB

Description:

N-channelmosfet.

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