IXTQ18N60P Datasheet - INCHANGE

IXTQ18N60P, N-Channel MOSFET

isc N-Channel MOSFET Transistor *.

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IXTQ18N60P-INCHANGE.pdf

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Datasheet Details

Part number:

IXTQ18N60P

Manufacturer:

INCHANGE

File Size:

253.22 KB

Description:

N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max)
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching Voltage Regulators
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Plused 54 A PD Total Dissipation @TC=25℃ 360

IXTQ18N60P Distributors

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IXTQ18N60P N-Channel MOSFET INCHANGE

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