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IXTQ18N60P

N-Channel MOSFET

IXTQ18N60P Features

* Drain Source Voltage- : VDSS= 600V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 420mΩ(Max)

* Fast Switching

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* Switching Voltage Regulators

IXTQ18N60P Datasheet (253.22 KB)

Preview of IXTQ18N60P PDF

Datasheet Details

Part number:

IXTQ18N60P

Manufacturer:

INCHANGE

File Size:

253.22 KB

Description:

N-channel mosfet.

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IXTQ18N60P N-Channel MOSFET INCHANGE

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