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STP13NM60ND N-Channel MOSFET

STP13NM60ND Description

isc N-Channel Mosfet Transistor INCHANGE Semiconductor STP13NM60ND *.

STP13NM60ND Features

* Drain Current ID= 11A@ TC=25℃
* Drain Source Voltage- : VDSS=600V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP13NM60ND Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 11 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Ope

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Datasheet Details

Part number
STP13NM60ND
Manufacturer
INCHANGE
File Size
203.13 KB
Datasheet
STP13NM60ND-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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