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STP28NM50N

N-Channel MOSFET

STP28NM50N Features

* Drain Current

* ID=21A@ TC=25℃

* Drain Source Voltage- : VDSS= 500V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 158mΩ(Max)

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* Low Drain-Source

STP28NM50N General Description


*Low Drain-Source On-Resistance APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. O.

STP28NM50N Datasheet (271.00 KB)

Preview of STP28NM50N PDF

Datasheet Details

Part number:

STP28NM50N

Manufacturer:

INCHANGE

File Size:

271.00 KB

Description:

N-channel mosfet.

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STP28NM50N N-Channel MOSFET INCHANGE

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