STW26NM60N Datasheet - INCHANGE

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STW26NM60N N-Channel MOSFET

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS D.

STW26NM60N-INCHANGE.pdf

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Datasheet Details

Part number:

STW26NM60N

Manufacturer:

INCHANGE

File Size:

349.47 KB

Description:

N-Channel MOSFET

Features

* Drain Current
* ID=20A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 140 W TJ Max. O

STW26NM60N Distributors

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STW26NM60N N-Channel MOSFET INCHANGE

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