IXFC30N60P Datasheet (IXYS Corporation)

IXFC30N60P, Polar MOSFETs

Advanced Technical Information PolarHVTM HiPerFET Power MOSFET www.datasheet4u.com IXFC 30N60P VDSS ID25 RDS(on) Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS, t = 1minute, leads-to-tab Mounting Force ISOPLUS220 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC =

IXFC30N60P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(