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IXFC30N60P, IXFR30N60P PolarHV HiPerFET Power MOSFET

IXFC30N60P Description

PolarHVTM HiPerFET Power MOSFET IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche .

IXFC30N60P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(

IXFC30N60P Applications

* z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 500 250 V V nA μA μA m

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This datasheet PDF includes multiple part numbers: IXFC30N60P, IXFR30N60P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFC30N60P, IXFR30N60P
Manufacturer
IXYS Corporation
File Size
154.91 KB
Datasheet
IXFR30N60P_IXYSCorporation.pdf
Description
PolarHV HiPerFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFC30N60P, IXFR30N60P.
Please refer to the document for exact specifications by model.

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PolarHV HiPerFET Power MOSFET IXYS Corporation
IXYS Corporation IXFC30N60P-like datasheet