IXFH6N120P Datasheet - IXYS Corporation

IXFH6N120P Power MOSFET

PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 6 18 3 300 10 250 -55 +150 150 .

IXFH6N120P Features

* International Standard Packages

* Dynamic dv/dt Rating

* Avalanche Rated

* Fast Intrinsic Diode

* Low QG & RDS(on)

* Low Drain-to-Tab Capacitance

* Low Package Inductance Advantages

* Easy to Mount

* Space Savings Applications

* DC-DC Converters

* Batt

IXFH6N120P Datasheet (502.88 KB)

IXFH6N120P Datasheet Preview — Preview of IXFH6N120P PDF

Datasheet Details

Part number:

IXFH6N120P

Manufacturer:

IXYS Corporation

File Size:

502.88 KB

Description:

Power mosfet.

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IXFH6N120P Power MOSFET IXYS Corporation

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