IXFL44N100P Polar Power MOSFET HiPerFET

IXYS Corporation

IXFL44N100P Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

IXFL44N100P Features

* G = Gate S = Source D = Drain G S D
* Silicon chip on Direct-Copper-Bond
* substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

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Datasheet Details

Part number: IXFL44N100P
Manufacturer: IXYS Corporation
File Size: 124.41 KB
Datasheet: IXFL44N100P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

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Polar Power MOSFET HiPerFET IXYS Corporation

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