* G = Gate S = Source D = Drain G S D
* Silicon chip on Direct-Copper-Bond
* substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(
IXFL44N100P Datasheet (124.41 KB)
IXFL44N100P
IXYS Corporation
124.41 KB
Polar power mosfet hiperfet.
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.
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