Datasheet Details
- Part number
- IXFN130N30
- Manufacturer
- IXYS Corporation
- File Size
- 215.06 KB
- Datasheet
- IXFN130N30_IXYSCorporation.pdf
- Description
- Power MOSFET
IXFN130N30 Description
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr IXFN 130N30 D G V = 300 V DSS ID25 = 130.
IXFN130N30 Features
* Internationalstandardpackages
* miniBLOC, with Aluminium nitride
isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
rated
* Low package inductance
* FastintrinsicRectifier
IXFN130N30 Applications
* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode
power supplies
* DC choppers
* Temperature and lighting controls
Advantages
* Easy to mount
* Space savings
* High power density
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