IXFN130N30 Datasheet - IXYS Corporation

IXFN130N30 - Power MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr IXFN 130N30 D G V = 300 V DSS ID25 = 130 A = RDS(on) 22 mΩ trr < 250 ns Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) I DM I AR EAR EAS dv/dt P D TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C Terminal (current limit) T C = 25°C, pulse width limited by T JM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/.

IXFN130N30 Features

* Internationalstandardpackages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance

* FastintrinsicRectifier

IXFN130N30_IXYSCorporation.pdf