* Internationalstandardpackages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* FastintrinsicRectifier
IXFN130N30 Datasheet (215.06 KB)
IXFN130N30
IXYS Corporation
215.06 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr IXFN 130N30 D G V = 300 V DSS ID25 = 130.
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