IXFN130N30 Power MOSFET

IXYS Corporation

Description

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr IXFN 130N30 D G V = 300 V DSS ID25 = 130.

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Datasheet Specifications

Part number: IXFN130N30
Manufacturer: IXYS Corporation
File Size: 215.06 KB
Datasheet: IXFN130N30_IXYSCorporation.pdf
Description: Power MOSFET

Features

* Internationalstandardpackages
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* FastintrinsicRectifier

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* Temperature and lighting controls Advantages
* Easy to mount
* Space savings
* High power density © 2003 IXYS All rights reserved D

IXFN130N30 Distributors

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IXFN130N30 Power MOSFET IXYS Corporation

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