IXFN80N50 Datasheet - IXYS Corporation

IXFN80N50 (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET

HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 A 75 A RDS(on) 50 mΩ 55 mΩ 500 V 500 V S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD.

IXFN80N50 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 Mountin

IXFN80N50 Datasheet (126.82 KB)

IXFN80N50 Datasheet Preview — Preview of IXFN80N50 PDF

Datasheet Details

Part number:

IXFN80N50

Manufacturer:

IXYS Corporation

File Size:

126.82 KB

Description:

(ixfn80n50 / ixfn75n50) hiperfet power mosfets single die mosfet.

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IXFN80N50 IXFN80N50 IXFN75N50 HiPerFET Power MOSFETs Single Die MOSFET IXYS Corporation

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