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IXFN80N50Q3 Power MOSFET

IXFN80N50Q3 Description

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN80N50Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD.

IXFN80N50Q3 Features

* International Standard Package
* Low Intrinsic Gate Resistance
* miniBLOC with Aluminum Nitride Isolation
* Low Package Inductance
* Fast Intrinsic Rectifier
* Low RDS(on) and QG Advantages
* High Power Density
* Easy to Mount

IXFN80N50Q3 Applications

* DC-DC Converters
* Battery Chargers
* Switch-Mode and Resonant-Mode Power Supplies
* DC Choppers
* Temperature and Lighting Controls © 2019 IXYS CORPORATION, All Rights Reserved DS100303A(12/19) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V,

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Datasheet Details

Part number
IXFN80N50Q3
Manufacturer
IXYS Corporation
File Size
633.71 KB
Datasheet
IXFN80N50Q3_IXYSCorporation.pdf
Description
Power MOSFET

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