IXFN80N60P3 Datasheet - IXYS Corporation

IXFN80N60P3 Polar3 HiPerFET Power MOSFET

Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN80N60P3 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A 70mΩ 250ns miniBLOC E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings.

IXFN80N60P3 Features

* International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance z z z z z z z 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mo

IXFN80N60P3-IXYSCorporation.pdf