IXFN80N50P Datasheet - IXYS

IXFN80N50P PolarHV HiPerFET Power MOSFET

Advance Technical Information IXFN 80N50P PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 80N50P VDSS ID25 trr RDS(on) www.DataSheet4U.com = 500 V = 65 A ≤ 65 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Transient Continuous TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt .

IXFN80N50P Features

* z Fast intrinsic diode z International standard package z Unclamped Inductive Switching (UIS) rated z UL recognized. z Isolated mounting base Advantages z Easy to mount z Space savings z High power density Mounting torque Terminal connection torque (M4) 1.5/13 Nm/ib.in. 1.5/13 Nm/ib.in. 30 g Symb

IXFN80N50P_IXYS.pdf