IXFN82N60Q3 - Power MOSFET
Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C 50/60 Hz, RMS, t = 1minute IISOL 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque Maximum Ratin
IXFN82N60Q3 Features
* International Standard Package
* Low Intrinsic Gate Resistance
* miniBLOC with Aluminum Nitride Isolation
* Low Package Inductance
* Fast Intrinsic Rectifier
* Low RDS(on) and QG Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications