* International Standard Package
* Low Intrinsic Gate Resistance
* miniBLOC with Aluminum Nitride Isolation
* Low Package Inductance
* Fast Intrinsic Rectifier
* Low RDS(on) and QG Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
IXFN82N60Q3 Datasheet (637.19 KB)
IXFN82N60Q3
IXYS
637.19 KB
Power mosfet.
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier
IXFN82N60Q3
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS
dv/dt
PD.
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