IXFN80N50Q2 Datasheet - IXYS

IXFN80N50Q2, HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFET IXFN 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Int.

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IXFN80N50Q2_IXYS.pdf

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Datasheet Details

Part number:

IXFN80N50Q2

Manufacturer:

IXYS

File Size:

528.82 KB

Description:

HiPerFET Power MOSFET

Features

* Double metal process for low gate resistance
* miniBLOC, with Aluminium nitride isolation
* Unclamped Inductive Switching (UIS) rated
* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.

Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 0 0 2 . 5 5.0 V V
* Switched-mode power supplies
* DC choppers and resonant-mode V DSS V GS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VG S, ID

IXFN80N50Q2 Distributors

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IXFN80N50Q2 HiPerFET Power MOSFET IXYS

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