IXFN80N50Q2 Datasheet - IXYS

IXFN80N50Q2 HiPerFET Power MOSFET

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFET IXFN 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A RDS(on)= 60 mΩ ≤ 250 ns trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuou.

IXFN80N50Q2 Features

* Double metal process for low gate resistance

* miniBLOC, with Aluminium nitride isolation

* Unclamped Inductive Switching (UIS) rated

* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.

IXFN80N50Q2 Datasheet (528.82 KB)

IXFN80N50Q2 Datasheet Preview — Preview of IXFN80N50Q2 PDF

Datasheet Details

Part number:

IXFN80N50Q2

Manufacturer:

IXYS

File Size:

528.82 KB

Description:

Hiperfet power mosfet.

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IXFN80N50Q2 HiPerFET Power MOSFET IXYS

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