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IXFN80N50Q2 HiPerFET Power MOSFET

IXFN80N50Q2 Description

Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFET IXFN 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Int.

IXFN80N50Q2 Features

* Double metal process for low gate resistance
* miniBLOC, with Aluminium nitride isolation
* Unclamped Inductive Switching (UIS) rated
* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.

IXFN80N50Q2 Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 0 0 2 . 5 5.0 V V
* Switched-mode power supplies
* DC choppers and resonant-mode V DSS V GS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VG S, ID

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Datasheet Details

Part number
IXFN80N50Q2
Manufacturer
IXYS
File Size
528.82 KB
Datasheet
IXFN80N50Q2_IXYS.pdf
Description
HiPerFET Power MOSFET

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HiPerFET Power MOSFET IXYS
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