IXFR180N10 Datasheet - IXYS Corporation

IXFR180N10, Power MOSFET

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data RDS(o.

datasheet Preview Page 1 from Datasheet4u.com

IXFR180N10_IXYSCorporation.pdf

IXFR180N10 Datasheet Preview — Preview of IXFR180N10 PDF

Datasheet Details

Part number:

IXFR180N10

Manufacturer:

IXYS Corporation

File Size:

53.97 KB

Description:

Power MOSFET

Features

* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages
* Easy assembly
* Space savings
* High power density 1.6 mm (0.063 in. ) from case for 10 s 50/60 Hz, RMS

IXFR180N10 Distributors

📁 Related Datasheet

IXFR102N30P IXFR120N25P IXFR140N20P IXFR14N100Q2 IXFR14N80 IXFR150N15

📌 All Tags

IXFR180N10 Power MOSFET IXYS Corporation

IXYS Corporation IXFR180N10-like datasheet