IXFR180N10 Power MOSFET

IXYS Corporation

Description

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data RDS(o.

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Datasheet Specifications

Part number: IXFR180N10
Manufacturer: IXYS Corporation
File Size: 53.97 KB
Datasheet: IXFR180N10_IXYSCorporation.pdf
Description: Power MOSFET

Features

* W °C °C °C °C V~ g
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

Applications

* DC-DC converters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC motor control Advantages
* Easy assembly
* Space savings
* High power density 1.6 mm (0.063 in. ) from case for 10 s 50/60 Hz, RMS

IXFR180N10 Distributors

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IXFR180N10 Power MOSFET IXYS Corporation

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