IXFR180N10 Datasheet - IXYS Corporation

IXFR180N10 Power MOSFET

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data RDS(on) = V A 8 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/m.

IXFR180N10 Features

* W °C °C °C °C V~ g

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR180N10 Datasheet (53.97 KB)

IXFR180N10 Datasheet Preview — Preview of IXFR180N10 PDF

Datasheet Details

Part number:

IXFR180N10

Manufacturer:

IXYS Corporation

File Size:

53.97 KB

Description:

Power mosfet.

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IXFR180N10 Power MOSFET IXYS Corporation

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