IXFR180N10 Datasheet - IXYS Corporation

IXFR180N10 Power MOSFET

HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data RDS(on) = V A 8 mW trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/m.

IXFR180N10 Features

* W °C °C °C °C V~ g

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR180N10_IXYSCorporation.pdf

IXFR180N10 Datasheet Preview — Preview of IXFR180N10 PDF

Datasheet Details

Part number:

IXFR180N10

Manufacturer:

IXYS Corporation

File Size:

53.97 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFR180N15P PolarHV HiPerFET Power MOSFET (IXYS Corporation)

IXFR180N06 Power MOSFET (IXYS Corporation)

IXFR180N07 HiPerFET Power MOSFETs (IXYS Corporation)

IXFR180N085 Power MOSFET (IXYS Corporation)

IXFR18N90P Power MOSFET (IXYS Corporation)

IXFR100N25 HiPerFET Power MOSFETs (IXYS Corporation)

IXFR102N30P Polar HiPerFET Power MOSFET (IXYS)

IXFR10N100F HiPerFET Power MOSFETs (IXYS Corporation)

TAGS

IXFR180N10 IXFR180N10 Power MOSFET IXYS Corporation

IXFR180N10 Distributor