IXFR180N15P Datasheet - IXYS Corporation

IXFR180N15P PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net IXFR 180N15P VDSS ID25 (Electrically Isolated Back Surface) RDS(on) trr = = ≤ ≤ 150 V 100 A 13 mΩ 200 ns Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External Lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC.

IXFR180N15P Features

* l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intr

IXFR180N15P_IXYSCorporation.pdf