IXFR18N90P Datasheet - IXYS Corporation

IXFR18N90P, Power MOSFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR18N90P VDSS I.

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IXFR18N90P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFR18N90P

Manufacturer:

IXYS Corporation

File Size:

134.32 KB

Description:

Power MOSFET

Applications

* z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 9A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.0 6.0 ± 100 V V nA z z z z Switched-

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IXFR18N90P Power MOSFET IXYS Corporation

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