IXGH31N60 Datasheet - IXYS Corporation

IXGH31N60 Ultra-Low VCE(sat) IGBT

Ultra-Low VCE(sat) IGBT IXGH 31N60 IXGT 31N60 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 31 80 ICM = 62 @ 0.8 VCES 150 -55 +150 150 -55 +150 V V V V A A A A W °C °.

IXGH31N60 Features

* International standard package

* Low VCE(sat) - for minimum on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 T

IXGH31N60_IXYSCorporation.pdf

IXGH31N60 Datasheet Preview — Preview of IXGH31N60 PDF

Datasheet Details

Part number:

IXGH31N60

Manufacturer:

IXYS Corporation

File Size:

87.58 KB

Description:

Ultra-low vce(sat) igbt.

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IXGH31N60 IXGH31N60 Ultra-Low VCEsat IGBT IXYS Corporation

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