* International standard package
* Low VCE(sat) - for minimum on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity Applications Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 T
IXGH31N60 Datasheet (87.58 KB)
IXGH31N60
IXYS Corporation
87.58 KB
Ultra-low vce(sat) igbt.
Ultra-Low VCE(sat) IGBT IXGH 31N60 IXGT 31N60 VCES IC25 VCE(sat) = 600 V = 60 A = 1.7 V Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 I.
📁 Related Datasheet
IXGH31N60U1 Ultra-Low VCE(sat) IGBT (IXYS Corporation)
IXGH30B60BD1 IGBT (IXYS Corporation)
IXGH30N120B3 GenX3 1200V IGBTs (IXYS Corporation)
IXGH30N120B3D1 GenX3 1200V IGBTs (IXYS Corporation)
IXGH30N120C3H1 High speed PT IGBTs (IXYS Corporation)
IXGH30N30 HiPerFAST IGBT (IXYS Corporation)
IXGH30N60 Low VCE(sat) IGBT (IXYS Corporation)
IXGH30N60A Low VCE(sat) IGBT (IXYS Corporation)
IXGH30N60B HiPerFASTTM IGBT (IXYS Corporation)
IXGH30N60B2 HiPerFAST IGBT (IXYS Corporation)
