IXGH31N60U1 Datasheet - IXYS Corporation

IXGH31N60U1 Ultra-Low VCE(sat) IGBT

Ultra-Low VCE(sat) IGBT with Diode IXGH 31N60U1 VCES IC25 VCE(sat) = 600 V = 40 A = 1.8 V Combi Pack Symbol www.DataSheet4U.com VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µH TC = 25 °C Maximum Ratings 600 600 ±20 ±30 40 31 80 ICM = 62 @ 0.8 VCES 150 -55 +150 150 -.

IXGH31N60U1 Features

* l l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-stat

IXGH31N60U1_IXYSCorporation.pdf