IXGH38N60U1 Datasheet - IXYS Corporation

IXGH38N60U1 Ultra-Low VCE(sat) IGBT

Ultra-Low VCE(sat) IGBT with Diode IXGH 38N60U1 VCES I C25 VCE(sat) = 600 V = 76 A = 1.8 V Combi Pack www.DataSheet4U.com Symbol Test Conditions TJ = 25°C to 150 °C TJ = 25°C to 150 °C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load, L = 100 µ H TC = 25°C Maximum Ratings 600 600 ±20 ±30 76 38 152 ICM = 76 @ 0.8 VCES 200 -55 +150 150 -55 +150 V V V V A A A A TO-247 AD V CES V CGR V GES V GEM I C25 I C90 I CM.

IXGH38N60U1 Features

* W °C °C °C l l l l Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD IGBT and anti-parallel FRED in one package 2nd generation HDMOSTM process Low VCE(sat) - for minim

IXGH38N60U1 Datasheet (68.76 KB)